27 October 1992 Polysilicon thin film transistor technology for active-matrix liquid-crystal displays (Invited Paper)
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Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131308
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
As users demand higher quality in flat panel displays (FPD) with larger viewing area and finer resolution, the polysilicon (p-Si) thin film transistor (TFTs) technology becomes increasingly important relative to the amorphous Si (a-Si) TFT technology currently employed in color active matrix liquid crystal displays (AMLCDs). The major advantage are its higher device speed and ability to integrate peripheral drivers with the display substrate, leading to higher panel performance and lower cost. This paper will first review the application and performance of p-Si TFT in AMLCDs. Following will be a discussion on the development of TFT fabrication technology and the critical device characteristics governing the choices of processing techniques. Finally, status of the manufacturing technology to realize low-cost high-performance TFT AMLCD will be summarized.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne Chiang, Anne Chiang, } "Polysilicon thin film transistor technology for active-matrix liquid-crystal displays (Invited Paper)", Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131308; https://doi.org/10.1117/12.131308

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