30 April 1993 Optically narrowed Rb-stabilized GaAlAs diode laser frequency standards with 1.5 X 10-10 absolute accuracy
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Proceedings Volume 1837, Frequency-Stabilized Lasers and Their Applications; (1993) https://doi.org/10.1117/12.143699
Event: Applications in Optical Science and Engineering, 1992, Boston, MA, United States
The development is reported of GaAlAs absolute laser frequency standards, optically narrowed to 12 and 1 in 1010 respectively have been achieved. The absolute frequencies of these laser diodes when stabilized to certain Rb hyperfine components have been measured by interferometric wavelength comparison against the iodine- stabilized 633 nm HeNe laser to a 1 (sigma) uncertainty of 1.5 X 10-10. Currently, these Rb-stabilized diode laser standards have important application in the determination of the absolute frequencies of 1.5 micrometers diode lasers for optical communications, by means of heterodyne comparison against frequency-doubled 1.56 micrometers diode radiation. Additionally we have developed a 780 nm diode swept-frequency heterodyne facility whereby the swept diode can be tracked over several GHz under close control relative to a Rb-stabilized fixed-frequency reference laser. This tracking technique has application in the monitoring of the frequency drift of Fabry Perot reference etalons of the type used in wavelength division multiplexing and diode stabilization. In particular the frequency or length drift of ultra-low-expansion etalons in evacuated enclosures can be monitored to high accuracy. A length resolution of 1 pm on 10 s timescales is possible using this method.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geoffrey P. Barwood, Geoffrey P. Barwood, Patrick Gill, Patrick Gill, W. R.C. Rowley, W. R.C. Rowley, } "Optically narrowed Rb-stabilized GaAlAs diode laser frequency standards with 1.5 X 10-10 absolute accuracy", Proc. SPIE 1837, Frequency-Stabilized Lasers and Their Applications, (30 April 1993); doi: 10.1117/12.143699; https://doi.org/10.1117/12.143699

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