30 November 1992 Reversible threshold bleaching in GaAs crystals under irradiation by a picosecond light pulse having photon energy close to bandgap
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Proceedings Volume 1842, Mode-Locked Lasers and Ultrafast Phenomena; (1992) https://doi.org/10.1117/12.131858
Event: XIV International Conference on Coherent and Nonlinear Optics, 1991, St. Petersburg, Russian Federation
Abstract
Interband absorption of a short pulse of light leads to the reversible bleaching of a sample within picosecond time range. After the pulse at times less than that of spontaneous recombination, a plasma state depends neither on the pulse energy nor on the energy of exciting photons. Radiation has been observed that correlates with excitation at picosecond times. Mechanisms of the phenomena have been studied. The paper describes an investigation of alterations in optical transparency of thin epitaxial layers of GaAs due to irradiation by a powerful pulse of light having a picosecond duration and the photon energy $HBAR(omega) ex close to the band gap Eg. The paper deals with those experiments as well as a set of experiments intended for clarifying the nature of the observed phenomena.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Ageeva, N. N. Ageeva, I. L. Bronevoi, I. L. Bronevoi, S. E. Kumekov, S. E. Kumekov, V. A. Mironov, V. A. Mironov, V. I. Perel, V. I. Perel, } "Reversible threshold bleaching in GaAs crystals under irradiation by a picosecond light pulse having photon energy close to bandgap", Proc. SPIE 1842, Mode-Locked Lasers and Ultrafast Phenomena, (30 November 1992); doi: 10.1117/12.131858; https://doi.org/10.1117/12.131858
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