15 October 1993 Arsenic diffused p+-n HgCdTe photodiodes
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Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156918
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
The p+-n homojunctions were formed by arsenic diffusion in the HgCdTe monocrystals and epilayers. Photodiode performance was established by measuring the current-voltage and spectral response characteristics. LWIR photodiodes are background limited at 77 K. MWIR photodiodes effectively operate at elevated temperature around 200 K and exhibit near BLIP performance when optical immersion is used.
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Jolanta Rutkowska, Antoni Rogalski, Jozef Piotrowski, Jaroslaw Pawluczyk, "Arsenic diffused p+-n HgCdTe photodiodes", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156918; https://doi.org/10.1117/12.156918
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