Determination of the density of deep traps in semiconductors by using the simultaneous TL/TSC measurement

Arkadiusz Mandowski; Jozef Swiatek-Prokop

doi:10.1117/12.156930

15 October 1993 Determination of the density of deep traps in semiconductors by using the simultaneous TL/TSC measurement

Arkadiusz Mandowski, Jozef Swiatek-Prokop

Author Affiliations +

Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156930
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland

Abstract

We demonstrate, that performing series of simultaneous TL/TSC (thermoluminescence/thermally stimulated conductivity) experiments it is possible to estimate the relative density of deep (thermally disconnected) traps in semiconducting crystals and other high-resistivity materials. The method is based on new, recently derived analytical formula for TSC. It is assumed that the crystal under study has an arbitrary number of discrete trap levels and one kind of recombination centers. The method is verified by means of numerical calculations.

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Arkadiusz Mandowski and Jozef Swiatek-Prokop "Determination of the density of deep traps in semiconductors by using the simultaneous TL/TSC measurement", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); https://doi.org/10.1117/12.156930

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