15 October 1993 Effect of initial trap occupancy on thermally stimulated currents in insulating crystals
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Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156929
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
The thermally stimulated currents (TSC) in a previously photoexcited insulating crystal with different initial trap occupancy are analyzed. Various characteristics of the TSC (trap occupancy, fractional recombination probability, thermally stimulated free electron density, free electron lifetime) are calculated as functions of the temperature and the initial occupancy of active traps. The results show that the TSC curves calculated for different values of the trap parameters and the initial trap occupancies can have similar shape. This suggests that there is no unique information about the recombination model of high-resistivity crystal that can be obtained from the shape of the TSC curve.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Daroszewski, T. Lukas, A. Opanowicz, "Effect of initial trap occupancy on thermally stimulated currents in insulating crystals", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156929; https://doi.org/10.1117/12.156929
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