15 October 1993 Electric properties of n-AgInS2 crystals
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Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156921
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
The temperature dependences of the electron concentration and electron mobility in the AgInS2 chalcopyrite crystals have been determined, in the temperature range 180 divided by 400 K, from the Hall effect study by using the van der Pauv method. The ionization energies and the densities of donors have been determined.
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B. Koscielniak-Mucha, B. Koscielniak-Mucha, A. Opanowicz, A. Opanowicz, Vasselin K. Vassilev, Vasselin K. Vassilev, } "Electric properties of n-AgInS2 crystals", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156921; https://doi.org/10.1117/12.156921
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