15 October 1993 Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate
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Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993); doi: 10.1117/12.156924
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
The relaxed multilayer structure is characterized by means of a tilt angle, C-factor, and the lateral coherency length. All these parameters were evaluated for the GaAs(0.7)P(0.3)/GaAs multilayer structure grown on a miscut GaAs(001) substrate. The determination of SL structural parameters was performed using the simulation program developed for two dimensional calculations important for multilayer structure grown on miscut substrates.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerzy Sass, "Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156924; https://doi.org/10.1117/12.156924
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KEYWORDS
Gallium arsenide

Stereolithography

Diffraction

Crystals

Ions

Liquid crystals

Liquids

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