Investigation of misfit dislocation profiles in ZnSe epilayer on GaAs substrate by Raman scattering

Marek Kozielski; Miroslaw Drozdowski; P. Ziobrowski; Waclaw Bala

doi:10.1117/12.156926

15 October 1993 Investigation of misfit dislocation profiles in ZnSe epilayer on GaAs substrate by Raman scattering

Marek Kozielski, Miroslaw Drozdowski, P. Ziobrowski, Waclaw Bala

Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156926
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland

Abstract

The detailed knowledge of strain and misfit dislocations profiles are important for the production and application of thin epilayer. It is shown that Raman scattering spectroscopy is needed to investigate these problems satisfactorily. In this paper we present Raman scattering measurements of the ZnSe epilayers with different thickness grown on GaAs substrate. The dependence of the frequency shift and the halfwidth of LO mode vs thickness of ZnSe epilayer is presented.

Citation Download Citation

Marek Kozielski, Miroslaw Drozdowski, P. Ziobrowski, and Waclaw Bala "Investigation of misfit dislocation profiles in ZnSe epilayer on GaAs substrate by Raman scattering", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); https://doi.org/10.1117/12.156926

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