15 October 1993 Strain related to oxygen agglomerates in processed Czochralski-grown silicon
Author Affiliations +
Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156993
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
Oxygen atoms contained in Czochralski-grown silicon single crystal (Cz-Si) precipitate at higher temperatures and produce strain at the oxygen agglomerate/Si matrix boundary. The strain is manifested by the changes of lattice constant and x-ray anomalous transmission values and ought to be taken into account for Si used as the reference standard. Hydrostatic pressure treatment applied to the Cz-Si single crystals makes it possible to obtain better understanding of the strain related to oxygen agglomeration.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Misiuk, Andrzej Misiuk, "Strain related to oxygen agglomerates in processed Czochralski-grown silicon", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156993; https://doi.org/10.1117/12.156993
PROCEEDINGS
7 PAGES


SHARE
Back to Top