15 October 1993 Dc and ac small signal electronic transport in ZnTe-ZnSe structures grown by molecular beam epitaxy
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Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156982
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland
Abstract
Results of dc and ac small signal electronic transport study of ZnTe/ZnSe heterostructures grown by molecular beam epitaxy are presented. The small signal admittance characteristics of these heterostructures show certain distinct features which are located at a bias point dependent on the interfaces. From the bias location of these features, the interfaces barrier height in ZnTe/ZnSe heterostructures is found to be 0.6 +/- 0.1 eV for electrons injected into ZnSe.
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Waclaw Bala, "Dc and ac small signal electronic transport in ZnTe-ZnSe structures grown by molecular beam epitaxy", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156982; https://doi.org/10.1117/12.156982
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