24 June 1993 Nonequilibrium behavior and defect diffusion in laser heating of semiconductors
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Abstract
A new theoretical framework for modeling the nonlinear laser heating of semiconductors is presented by incorporating the dynamical behavior of semiconductors; the temperature-carrier coupling, the generation and recombination of defects, the diffusion of defects, the diffusion of impurities by defect-dopant pair mechanism, and chemical reaction between species. In this study, we apply our model to n-type silicon irradiated by a nanosecond pulsed Nd:YAG laser. The dynamical evolution of laser-semiconductor interaction process is examined by calculation of carrier, defect, and impurity concentration profiles.
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Woei-Yun Ho, Chun Chi Ma, Rodger M. Walser, Michael F. Becker, "Nonequilibrium behavior and defect diffusion in laser heating of semiconductors", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147420; https://doi.org/10.1117/12.147420
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