1 July 1993 GaAs heteroepitaxy with submicron Si CMOS: an experimental compatibility study
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Proceedings Volume 1849, Optoelectronic Interconnects; (1993) https://doi.org/10.1117/12.147077
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Routine use of optical interconnections in MCM based computing systems ideally favors monolithic integration to achieve both high density and manufacturability. The central issue facing this monolithic evolutionary path is the compatibility of both III-V semiconductor growth and subsequent optoelectronic device and passive optical interconnection processing with existing and future generations of CMOS and advanced packaging technology. The influence of GaAs heteroepitaxy and device processing on submicron CMOS is the subject of an ongoing program seeking to experimentally determine compatibility conflicts and through understanding of their physical mechanisms identify directions for achieving GaAs heteroepitaxy compatibility with future CMOS generations. Following a brief review of GaAs heteroepitaxy compatibility concerns, preliminary results from the current experimental program exploring the influence of both thermally simulated and actual GaAs heteroepitaxy on commercial 0.9 micrometers (0.6 micrometers minimum channel length) CMOS are presented including parametric device modeling, interface state, and hot electron measurements of experimental test lot devices.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence Anthony Hornak, Lawrence Anthony Hornak, Stuart K. Tewksbury, Stuart K. Tewksbury, Homi E. Nariman, Homi E. Nariman, } "GaAs heteroepitaxy with submicron Si CMOS: an experimental compatibility study", Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); doi: 10.1117/12.147077; https://doi.org/10.1117/12.147077
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