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Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers
High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD)
Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer
Efficient, high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration
Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2 μm