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16 June 1993 1000-W QCW output power from surface-emitting GaAs/AlGaAs laser diode arrays
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146920
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
For the first time, quasi-continuous wave (QCW) output power level of 1000 W from monolithic surface emitting laser diodes (M-SELDs) is reported. To realize the basic structure of the laser diodes, we have developed an original 2-D structure where the epitaxial structure is made on engraved GaAs substrate and the laser facets are made by micro-cleavage technique. With a compact planar association of 10 M-SELDs of 0.1 cm2 which emits 100 W QCW each (optical power density equals 1 KW/cm2) on the same submount, a power source of 1000 W QCW has been obtained. The operating current is 150 A, the slope efficiency is 7.5 W/A and the optical divergence of the beam is lower than 20 degree(s) FWHM in the perpendicular direction.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Groussin, Francois Pitard, Alain Parent, and Claude Carriere "1000-W QCW output power from surface-emitting GaAs/AlGaAs laser diode arrays", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146920
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