Are InAlGaAs strained-layer quantum-well lasers more reliable?

Richard F. Murison; Alan H. Moore; Nigel Holehouse; Shuyen R. Lee

doi:10.1117/12.146908

16 June 1993 Are InAlGaAs strained-layer quantum-well lasers more reliable?

Richard F. Murison, Alan H. Moore, Nigel Holehouse, Shuyen R. Lee

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146908
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Laser diodes and superluminescent diodes have been fabricated using epitaxial structures employing a strained quantum well of InAlGaAs. These devices emit at wavelengths in the 800 - 900 nm range commonly addressed using unstrained GaAs quantum well structures. Results are presented which indicate that the strained layer devices exhibit a marked immunity from sudden unexpected ('freak') failure modes.

Citation Download Citation

Richard F. Murison, Alan H. Moore, Nigel Holehouse, and Shuyen R. Lee "Are InAlGaAs strained-layer quantum-well lasers more reliable?", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146908

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