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16 June 1993 Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146932
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The design and operating characteristics of strained-layer InGaAsP/InGaAs active-grating surface-emitting amplified diode lasers are presented. For the first time, we report cw operation of an active-grating amplifier at a single wavelength of 1.7 micrometers with a cw power output in excess of 100 mW. In addition, we discuss, theoretically, the possibility of laterally scaling these devices using antiguided laser-array structures.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nils W. Carlson, So Kuen Liew, Raymond J. Menna, Peter D. Gardner, James T. Andrews, Jay B. Kirk, Jerome K. Butler, Alfred R. Triano, and W. F. Reichert "Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146932
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