16 June 1993 Effect of strain on 1.5-μm quantum-well lasers
Author Affiliations +
Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146902
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Physical parameters contributing to the threshold current and its temperature characteristics of 1.5 micrometers semiconductor lasers have been separately measured in lattice matched and compressively strained lasers. It is found that the reduction of threshold current density in strained devices is attributed to the reduction of Auger recombination, intervalence band absorption and transparency carrier density brought about by the introduction of strain. It is also found that the temperature sensitivity of both lattice matched and strained devices is dominated by the strong differential gain change with temperature, instead of Auger recombination.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yau Zou, Yau Zou, Jules S. Osinski, Jules S. Osinski, Piotr A. Grodzinski, Piotr A. Grodzinski, Paul Daniel Dapkus, Paul Daniel Dapkus, William C. Rideout, William C. Rideout, Wayne F. Sharfin, Wayne F. Sharfin, F. David Crawford, F. David Crawford, "Effect of strain on 1.5-μm quantum-well lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146902; https://doi.org/10.1117/12.146902
PROCEEDINGS
12 PAGES


SHARE
Back to Top