16 June 1993 Efficient, high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146918
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We review in-plane surface-emitting laser diode arrays and their applications. Efficient operation of monolithic, large area (0.54 cm2, 108 emitters) two-dimensional surface- emitting GaAlAs laser diode arrays mounted junction-down on microchannel heat exchangers has been demonstrated. Devices with 1.5 micrometers thick cladding layers were operated quasi- continuous-wave to high peak output power densities (> 100 W/cm2), exhibited high power conversion efficiencies (22%), and full width emission spectra of < 4 nm at 2% - 5% duty cycles. Arrays with a 2.5 micrometers thick cladding region were operated under continuous wave conditions to 46 W/cm2 power density levels. This corresponded to a 550 W/cm2 heat flux extracted by microchannel heat exchanges.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Jansen, Szutsun Simon Ou, Jane J. Yang, Moshe Sergant, Cynthia A. Hess, Chan A. Tu, Phillip Hayashida, Dennis P. Bowler, Fernando D. Alvarez, George M. Harpole, and Mark A. Emanuel "Efficient, high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146918; https://doi.org/10.1117/12.146918
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