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16 June 1993 High-efficiency three-terminal laser array for optical interconnect
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Strained InGaAs/GaAs quantum well three terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off efficiency ratio of 556 with optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. Preliminary digital modulation shows bit error rate (BER) lower than 10-16 at 500 Mb/s. A theoretical analysis of the dynamic behavior of this device shows potential operation of 6.6 Gb/s with low inter-symbol interference.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Newton C. Frateschi, Hanmin Zhao, James J. Elliot, Sabeur Siala, M. Govindarajan, Richard N. Nottenburg, and Paul Daniel Dapkus "High-efficiency three-terminal laser array for optical interconnect", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993);

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