16 June 1993 High-power short-wavelength surface-emitting laser diodes
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146919
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We report on the first demonstration of high power, short-wavelength, in-plane, horizontal cavity ion-beam-etched surface-emitting lasers with emission wavelengths of 740 nm and 635 nm, and surface-emitting output powers of 850 mW and 170 mW from GaAlAs/GaAs and GaInP/GaAlInP laser diodes, respectively.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Szutsun Simon Ou, Jane J. Yang, Michael Jansen, "High-power short-wavelength surface-emitting laser diodes", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146919; https://doi.org/10.1117/12.146919
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