16 June 1993 High-temperature operation of high-power InGaAlP visible laser diodes
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146928
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
High-power InGaAlP lasers operating at high temperature have been realized by using a strained active layer, a highly doped p-cladding layer, and a long cavity structure. The maximum operating temperature has been increased to 80 degree(s)C for a 50 mW operation of transverse-mode stabilized laser diodes, and also for a 100 mW operation of broad-stripe laser diodes. This improvement in the temperature characteristics has led to a highly reliable operation at a high output power. Transverse-mode stabilized InGaAlP lasers oscillating at 698 nm have exhibited a stable operation for 2,000 hours at a high output power of 40 mW with an ambient temperature of 40 degree(s)C. A highly reliable operation of broad-stripe structure lasers has also been achieved. A stable 100 mW operation for 1,500 hours at a temperature of 50 degree(s)C was obtained for InGaAlP lasers with a stripe width of 25 micrometers .
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gen-ichi Hatakoshi, Gen-ichi Hatakoshi, Koichi Nittoh, Koichi Nittoh, Yukie Nishikawa, Yukie Nishikawa, Kazuhiko Itaya, Kazuhiko Itaya, Masaki Okajima, Masaki Okajima, } "High-temperature operation of high-power InGaAlP visible laser diodes", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146928; https://doi.org/10.1117/12.146928
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