16 June 1993 Localization of crystallographic defects in failed laser diodes using optical probes
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146911
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
A precise localization of dark line defects in failed AlGaAs/GaAs laser diodes has been achieved by means of scanning optical microscope (SOM) techniques. The analytical scheme has been based on optical beam induced current (OBIC) and photoluminescence (PL) at three photon probes and different device bias voltages. The imaging analysis has been associated to a progressive chemical etching of the semiconductor material. Numerical simulation of the experiment has been performed for results interpretation. Results are in good agreement with previously published theories and with TEM analysis. The proposed analytical procedure can be applied to a wide variety of devices.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laura Serra, Laura Serra, Giuseppe A. Azzini, Giuseppe A. Azzini, R. De Franceschi, R. De Franceschi, M. Liberatore, M. Liberatore, M. Mancini, M. Mancini, Guido Manzone, Guido Manzone, Paolo Montangero, Paolo Montangero, } "Localization of crystallographic defects in failed laser diodes using optical probes", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146911; https://doi.org/10.1117/12.146911


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