16 June 1993 Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146909
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The longitudinal mode hopping and the related terminal electrical noise in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated. It is found that electrical mode hopping has a Lorentzian dependence. The correlation with the optical noise is experimentally shown for low and medium frequencies.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Pierre Orsal, Jean-Marie Peransin, K. Daulasim, Philippe Signoret, Pascal Y. Devoldere, M. Robinet, and Mitsuo Fukuda "Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146909; https://doi.org/10.1117/12.146909
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