16 June 1993 Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146897
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theresa Sze, Theresa Sze, A. Mohammed Mahbobzadeh, A. Mohammed Mahbobzadeh, Julian Cheng, Julian Cheng, Stephen D. Hersee, Stephen D. Hersee, Marek Osinski, Marek Osinski, Steven R. J. Brueck, Steven R. J. Brueck, Kevin J. Malloy, Kevin J. Malloy, "Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146897; https://doi.org/10.1117/12.146897
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