16 June 1993 Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146913
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
CW output power in excess of 60 mW at 110 degree(s)C with a fundamental-transverse mode and stable CW operation over 3000 hrs under 30 mW at 60 degree(s)C have been realized by employing a multiquantum well (MQW) active layer with optimized compressive strain. A window-structure laser fabricated by solid phase diffusion of Zn has exhibited high-power CW operation over 150 mW keeping the fundamental-transverse-mode. Systematical approach to the high power operation has also been discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Arimoto, Hitoshi Watanabe, Masashi Yasuda, K. Kadoiwa, Etsuji Omura, Masao Aiga, and Kenji Ikeda "Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146913; https://doi.org/10.1117/12.146913
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