16 June 1993 Resonant optical pumping of vertical-cavity semiconductor lasers
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146899
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We investigate experimentally the threshold and slope efficiency of a vertical cavity surface- emitting semiconductor laser with half-wave spaced quantum wells as functions of the pump wavelength in the 700 - 900 nm. While most of these devices demonstrated to date have employed pump wavelengths in the range 700 - 760 nm for optimum absorption in the spacers between the quantum wells (and minimal absorption in the epitaxial mirror structure), we show that equally good performance be obtained using longer wavelengths appropriate for diode laser pumping, provided that the pump wavelength is chosen to match a resonant cavity mode. For maximum pumping efficiency using the latter technique a stabilized single-mode pump laser should be used.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew J. Bohn and John Gerard McInerney "Resonant optical pumping of vertical-cavity semiconductor lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146899; https://doi.org/10.1117/12.146899
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