16 June 1993 Theoretical gain in strained-layer quantum wells
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146905
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
In this paper, we discuss issues related to maximizing the performance of gain in both compressive and tensile strained quantum wells. Effects of well width, barrier height, modulation doping, and heavy-to-light hole separation are theoretically examined.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott W. Corzine and Larry A. Coldren "Theoretical gain in strained-layer quantum wells", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146905; https://doi.org/10.1117/12.146905
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