Theoretical gain in strained-layer quantum wells

Scott W. Corzine; Larry A. Coldren

doi:10.1117/12.146905

16 June 1993 Theoretical gain in strained-layer quantum wells

Scott W. Corzine, Larry A. Coldren

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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146905
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

In this paper, we discuss issues related to maximizing the performance of gain in both compressive and tensile strained quantum wells. Effects of well width, barrier height, modulation doping, and heavy-to-light hole separation are theoretically examined.

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Scott W. Corzine and Larry A. Coldren "Theoretical gain in strained-layer quantum wells", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146905; https://doi.org/10.1117/12.146905

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