16 June 1993 Vertical-cavity semiconductor lasers: structural characterization, CAD, and DFB structures
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146898
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
One of the key technologies required for manufacturing vertical-cavity laser arrays at a production scale is rapid and nondestructive evaluation of the laser material. A brief review of methods for materials characterization of vertical-cavity semiconductor lasers is presented. Techniques based on reflectance spectroscopy, photoluminescence, photoreflectance, double crystal x-ray diffractometry, scanning electron microscopy, and transmission electron microscopy are used to determine alloy composition, cavity spacer thickness, and Bragg mirror layer thicknesses. Critical aspects of data gathering, analysis, interpretation, and simulation are highlighted. The optical simulation software used for computer aided device design and simulation of reflectance spectra is also briefly discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David H. Christensen, David H. Christensen, Craig A. Parsons, Craig A. Parsons, Joseph G. Pellegrino, Joseph G. Pellegrino, James R. Hill, James R. Hill, R. S. Rai, R. S. Rai, S. M. Crochiere, S. M. Crochiere, Robert K. Hickernell, Robert K. Hickernell, David T. Schaafsma, David T. Schaafsma, "Vertical-cavity semiconductor lasers: structural characterization, CAD, and DFB structures", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146898; https://doi.org/10.1117/12.146898
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