24 June 1993 1.3-μm InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents
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Proceedings Volume 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices; (1993) https://doi.org/10.1117/12.147598
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
A narrow spread of threshold currents from 10.8 to 12.8 mA across a wafer has been demonstrated. To the best of our knowledge, this is the narrowest spread of threshold currents that has ever been reported for non-broad-area semiconductor lasers. From experimental results, it seems that the active width is probably the most important parameter in controlling the spread of threshold currents.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Long Jiang, Ching Long Jiang, Robert J. Miller, Robert J. Miller, Mark Soler, Mark Soler, Maria D. Ferreira, Maria D. Ferreira, Keith Wilder, Keith Wilder, Eugene A. Imhoff, Eugene A. Imhoff, John D. Kulick, John D. Kulick, Randy Wilson, Randy Wilson, } "1.3-μm InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents", Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); doi: 10.1117/12.147598; https://doi.org/10.1117/12.147598
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