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14 July 1993 Excitation spectroscopy of thin-film disordered semiconductors
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Proceedings Volume 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
In this paper we examine the use of a high-power, tunable free-electron laser (FEL) source to measure photoluminescence (PL) and photoluminescence excitation (PLE) spectra in two classes of disordered semiconductors, amorphous semiconductors and partially ordered III-V ternary semiconductors. The source must be tunable to follow the absorption continuously across the region of the optical energy gap, and the source must be of high power to provide enough absorbed photons in this relatively transparent spectral region so that PL processes can be measured. The usefulness of PLE spectroscopy in these semiconducting thin films lies in the fact that if the quantum efficiency (eta) for the PL process is independent of energy, then the PLE spectrum is a measure of the optical absorption. In addition, disordered semiconductors often exhibit enhanced absorption below the optical gap due to the disorder itself. PLE measurements that probe regions where the absorption coefficient (alpha) is small ((alpha) < < 103 cm-1) are most important because in these regions (alpha) is dominated by the electronic states introduced by the disorder.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Q. Gu, P. Craig Taylor, Jim T. McKinley, Akira Ueda, X. Yang, and Norman H. Tolk "Excitation spectroscopy of thin-film disordered semiconductors", Proc. SPIE 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, (14 July 1993);

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