14 July 1993 Far-infrared harmonic generation from semiconductor heterostructures
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Proceedings Volume 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science; (1993) https://doi.org/10.1117/12.148116
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Carriers confined in quantum well structures in the GaAs-AlxGa1-xAs and InAs-AlSb systems have strongly nonlinear response at far-infrared (FIR) frequencies: they are strong harmonic generators. To date, studies of FIR frequency harmonic generation from heterostructures have been limited primarily to discrete frequencies accessible by molecular gas lasers (MGL). Because the mechanisms responsible for harmonic generation are expected to have frequency dependence in the FIR, the broad, continuous frequency coverage of the free electron lasers (FEL) at UCSB (4 cm-1 - 25 cm-1 for the millimeter FEL, and 32 cm-1 to 155 cm-1 for the FIR FEL) make them ideal sources for studies of free carrier nonlinearities in heterostructures. Quantitative experiments on harmonic generation must distinguish the small harmonic signals generated by the samples from the fundamental, and from the harmonic content of the incident FEL light. Here we discuss strategies for achieving the required selectivity, preliminary data taken with an MGL on heterostructure samples, and data taken with the FEL for a suitable calibration sample, LiNbO3.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea G. Markelz, Andrea G. Markelz, Elisabeth G. Gwinn, Elisabeth G. Gwinn, Mark S. Sherwin, Mark S. Sherwin, James N. Heyman, James N. Heyman, Chen Nguyen, Chen Nguyen, Herbert Kroemer, Herbert Kroemer, P. F. Hopkins, P. F. Hopkins, Arthur C. Gossard, Arthur C. Gossard, } "Far-infrared harmonic generation from semiconductor heterostructures", Proc. SPIE 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, (14 July 1993); doi: 10.1117/12.148116; https://doi.org/10.1117/12.148116

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