14 July 1993 Intrinsic response times of double-barrier resonant tunneling diodes at terahertz frequencies
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Proceedings Volume 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science; (1993) https://doi.org/10.1117/12.148045
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We have measured the broad band terahertz response of state of the art InGaAs/AlAs and InAs/AlSb resonant tunneling diodes from 180 GHz to 3.6 THz using the free-electron lasers at UCSB. A tungsten whisker antenna in a conventional probe station is used to couple the far- infrared radiation into the device. Normalizing the resonant tunneling response with the off- resonant response allows us to circumvent the much slower RC time constant of the device and consequently enables a measurement of the relaxation time due to the quantum inductance.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff S. Scott, Jann P. Kaminski, S. James Allen, David H. Chow, Mark Lui, "Intrinsic response times of double-barrier resonant tunneling diodes at terahertz frequencies", Proc. SPIE 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, (14 July 1993); doi: 10.1117/12.148045; https://doi.org/10.1117/12.148045
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