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24 June 1993 Formation of reversible and irreversible structural defects on silicon surface under laser-pulsed influence
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Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147618
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The processes of the defects and the periodic structures formation on the silicon surface under the pulsed laser influence ((lambda) equals 1.06 micrometers , (tau) approximately equals 1.5 msec, EL approximately equals 3 J) have been studied. It has been shown that (1) at the energy densities FL thres (Fthres is the threshold energy density), formation of reversible defects took place, and at FL Fthres, irreversible defects appeared, (2) local melting of the surface started within the region where the defects formation occurred, (3) the periodic structures formation strongly depended on the mutual orientation vector of the crystallographic axes and the laser beam polarization.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander F. Banishev, L. V. Novikova, and M. M. Novikov "Formation of reversible and irreversible structural defects on silicon surface under laser-pulsed influence", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); https://doi.org/10.1117/12.147618
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