24 June 1993 Laser-induced phase transitions in III-V compounds
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Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147619
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
The laser induced phase transitions in III-V compounds have been investigated by time resolved reflectivity. Raman scattering and Rutherford Back scattering techniques. It has been shown that an intensive evaporation of V-component from the laser melted crystal can initiate the solidification of the melt directly from the surface. This layer has a polycrystalline structure with (110) preferred orientation and is rather defective. The defect concentration is maximal at the border where the recrystallization front moving from the surface and that moving from the substrate are meeting.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel K. Kashkarov, Pavel K. Kashkarov, Viktor Yu. Timoshenko, Viktor Yu. Timoshenko, N. G. Chechenin, N. G. Chechenin, Alexander N. Obraztsov, Alexander N. Obraztsov, } "Laser-induced phase transitions in III-V compounds", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147619; https://doi.org/10.1117/12.147619

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