24 June 1993 Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface
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Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147622
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The regular structure formation on a silicon surface under the millisecond pulse of linear-polarized Nd-laser light irradiation has been studied experimentally. The surface structures induced by the interference of incident wave and surface electromagnetic waves and also the double-period structures with periods d — 2-3 microns were observed in the nonhomogeneous melting regime. The double-period structures formation was explained by polaritonic mechanism and was due to a nonlinear absorptance changes in semiconductor-metal phase transition.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg P. Gashkov, Mikhail N. Libenson, Vladimir S. Makin, Vladimir V. Trubaev, "Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147622; https://doi.org/10.1117/12.147622
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