24 June 1993 Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface
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Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147622
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The regular structure formation on a silicon surface under the millisecond pulse of linear-polarized Nd-laser light irradiation has been studied experimentally. The surface structures induced by the interference of incident wave and surface electromagnetic waves and also the double-period structures with periods d — 2-3 microns were observed in the nonhomogeneous melting regime. The double-period structures formation was explained by polaritonic mechanism and was due to a nonlinear absorptance changes in semiconductor-metal phase transition.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg P. Gashkov, Oleg P. Gashkov, Mikhail N. Libenson, Mikhail N. Libenson, Vladimir S. Makin, Vladimir S. Makin, Vladimir V. Trubaev, Vladimir V. Trubaev, } "Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147622; https://doi.org/10.1117/12.147622
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