Physical mechanisms of light-induced polarization effects "on reflection" in GaAs

Dmitri Yu. Paraschuk; Nikolay I. Zheludev; Vitalyi E. Gusev

doi:10.1117/12.147623

24 June 1993 Physical mechanisms of light-induced polarization effects "on reflection" in GaAs

Dmitri Yu. Paraschuk, Nikolay I. Zheludev, Vitalyi E. Gusev

Author Affiliations +

Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147623
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Non-steady-state polarization response of photoexcited GaAs has been investigated with the specular micropolarimetry particularly in crystals with laser induced damages of near surface layer. Physical models of the polarization response in the excited GaAs due to electron-hole plasma photogeneration are discussed: the nonlocal electron-hole plasma model the optically induced piezogyrotropy the electrooptic effect in the Dember field. 1.

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Dmitri Yu. Paraschuk, Nikolay I. Zheludev, and Vitalyi E. Gusev "Physical mechanisms of light-induced polarization effects "on reflection" in GaAs", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); https://doi.org/10.1117/12.147623

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