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24 June 1993 Ultraviolet laser deposition of doped PbTe thin films
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Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147626
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The possibilities and advantages of UV-laser ablation technique for deposition of doped PbTe thin films are discussed. To understand the effects of experimental parameters on layer formation the stages of laser sputtering of the target and film growth were investigated. Method of laser ionization RETOF mass spectrometry was used to obtain the energy distribution and chemical nature of evaporated particles as a function of wavelength and laser radiation power. The influence of experimental parameters on the deposited film thickness, stoichiometry and crystalline perfection was checked. The dependence of doped PbTe films photoelectrical properties on the experimental parameters.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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