17 June 1993 Femtosecond ellipsometry and surface second-harmonic probes of Ge, Si1-xGex, Si, and diamond
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Proceedings Volume 1861, Ultrafast Pulse Generation and Spectroscopy; (1993) https://doi.org/10.1117/12.147062
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We demonstrate two complementary techniques: femtosecond ellipsometry and surface second harmonic generation, for characterization and diagnostics of semiconductor epilayers using unamplified femtosecond laser sources. Through femtosecond ellipsometry, we obtained the time-resolved change in the real and imaginary parts of the index of refraction in relaxed and strained Si1-xGex alloys. Through surface second harmonic generation in conjunction with the Kerr Lens mode-locked (KLM) Ti:Sapphire laser, we obtained surface second harmonic signals in Si(100) and Diamond(111) with an unprecedented signal-to-noise ratio.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry I. Dadap, Jerry I. Dadap, Heung-Ro Choo, Heung-Ro Choo, X. F. Hu, X. F. Hu, Qing Deng, Qing Deng, Michael C. Downer, Michael C. Downer, } "Femtosecond ellipsometry and surface second-harmonic probes of Ge, Si1-xGex, Si, and diamond", Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147062; https://doi.org/10.1117/12.147062
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