17 June 1993 Nonradiative-radiative recombination and trapping processes in the InGaAs/GaAs single quantum wells
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Proceedings Volume 1861, Ultrafast Pulse Generation and Spectroscopy; (1993) https://doi.org/10.1117/12.147069
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
By using the time-resolved photoluminescence technique, we have studied the temporal properties of the photoluminescence from several InGaAs/GaAs single quantum well samples at 77 K. The radiative recombination, the nonradiative recombination and the trapping processes have been investigated for these samples. From the excitation power dependence and temperature dependence measurement, the radiative and the nonradiative lifetime of the carriers and the excitons in these quantum well samples have been obtained which reveal the great influence of the excitation power, temperature and the parameters of the well on these recombination processes.
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Shixiong Qian, Jie Song, Yufen Li, Wen-Ji Peng, and Zhenxin Yu "Nonradiative-radiative recombination and trapping processes in the InGaAs/GaAs single quantum wells", Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147069; https://doi.org/10.1117/12.147069

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