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21 July 1993 Growth of high-quality single crystals of KYF4 by TSSG method
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Proceedings Volume 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II; (1993) https://doi.org/10.1117/12.149271
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We report for the first time the growth of large size high quality single crystals of KYF4 (KYF) by TSSG method using the conventional weight-feed-back automatic diameter control Czochralski puller. We have made major revision of the KF-YF3 phase diagram and showed that KYF melts peritectically. The crystals can accommodate large size variations of the dopants. We were able to dope it with a large number of rare earth elements. The crystal has long fluorescence lifetime and weak phonon energy making it ideal as upconversion laser host.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce H. T. Chai, J. Lefaucheur, Anh-Tuyet Pham, G. B. Loutts, and John F. Nicholls "Growth of high-quality single crystals of KYF4 by TSSG method", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149271
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