Growth of low-scattering-loss Cr3+:LiSrAlF6 single crystals

Bruce H. T. Chai; J. Lefaucheur; Anh-Tuyet Pham; V. Castillo

doi:10.1117/12.149283

21 July 1993 Growth of low-scattering-loss Cr3+:LiSrAlF6 single crystals

Bruce H. T. Chai, J. Lefaucheur, Anh-Tuyet Pham, V. Castillo

Proceedings Volume 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II; (1993) https://doi.org/10.1117/12.149283
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

The growth of high quality, low scattering loss Cr doped LiSAF single crystals by Czochralski pulling technique is described. Scattering loss as low as 0.1%/cm has achieved. The loss depends on the Cr doping concentration. We found that maintaining flat interface growth is crucial to reduce scattering loss and minimize wavefront distortion. These low loss materials provide true prospect of all solid state diode pumped tunable laser as well as ultrashort pulse generation and amplification.

Citation Download Citation

Bruce H. T. Chai, J. Lefaucheur, Anh-Tuyet Pham, and V. Castillo "Growth of low-scattering-loss Cr3+:LiSrAlF6 single crystals", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149283

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