16 June 1993 Diode pumping of LaxNd1-xMgAl11O19 lasers
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Proceedings Volume 1865, Diode Pumping of Average-Power Solid State Lasers; (1993) https://doi.org/10.1117/12.146936
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Compared to other Nd3+ doped materials such as YAG:Nd3+, YAP:Nd3+, and YLF:Nd3+, crystal LaxNd1-xMgAl11O19 (LNA) has relatively much higher Nd concentration, long upper state lifetime, and large absorption bandwidths. LNA crystals have been pumped by laser diode arrays emitting around 800 nm. High-quality LNA crystals for this purpose have been grown.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Xu, Guangzhao Wu, Yafang Shen, Xinmin Zhang, Xiurong Zhang, Shaoting Gu, "Diode pumping of LaxNd1-xMgAl11O19 lasers", Proc. SPIE 1865, Diode Pumping of Average-Power Solid State Lasers, (16 June 1993); doi: 10.1117/12.146936; https://doi.org/10.1117/12.146936
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