16 June 1993 Diode pumping of LaxNd1-xMgAl11O19 lasers
Author Affiliations +
Proceedings Volume 1865, Diode Pumping of Average-Power Solid State Lasers; (1993) https://doi.org/10.1117/12.146936
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Compared to other Nd3+ doped materials such as YAG:Nd3+, YAP:Nd3+, and YLF:Nd3+, crystal LaxNd1-xMgAl11O19 (LNA) has relatively much higher Nd concentration, long upper state lifetime, and large absorption bandwidths. LNA crystals have been pumped by laser diode arrays emitting around 800 nm. High-quality LNA crystals for this purpose have been grown.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Xu, Jun Xu, Guangzhao Wu, Guangzhao Wu, Yafang Shen, Yafang Shen, Xinmin Zhang, Xinmin Zhang, Xiurong Zhang, Xiurong Zhang, Shaoting Gu, Shaoting Gu, } "Diode pumping of LaxNd1-xMgAl11O19 lasers", Proc. SPIE 1865, Diode Pumping of Average-Power Solid State Lasers, (16 June 1993); doi: 10.1117/12.146936; https://doi.org/10.1117/12.146936
PROCEEDINGS
6 PAGES


SHARE
Back to Top