9 June 1993 Breakdown of high-voltage silicon devices
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146564
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We present the results of empirical studies of the breakdown of p+-i-n+, n+-i-n+, and p+-i-p+ silicon structures with approximately 1 cm long intrinsic regions. These results show that the contacts have a strong effect on the breakdown characteristics of these devices. We present results for laminated structures and for a device with a ribbed surface which show that the breakdown characteristics of silicon devices can be improved significantly by such geometry modifications. We also present empirical evidence that double injection effects occur in p+-i-n+ devices, and that these effects will limit the efficacy of such devices when subject to relatively long voltage pulses.
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Frank E. Peterkin, B. J. Hankla, R. A. Peterson, A. Rhagavendran, Paul Frazer Williams, "Breakdown of high-voltage silicon devices", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146564; https://doi.org/10.1117/12.146564
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