9 June 1993 Breakdown of high-voltage silicon devices
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146564
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
We present the results of empirical studies of the breakdown of p+-i-n+, n+-i-n+, and p+-i-p+ silicon structures with approximately 1 cm long intrinsic regions. These results show that the contacts have a strong effect on the breakdown characteristics of these devices. We present results for laminated structures and for a device with a ribbed surface which show that the breakdown characteristics of silicon devices can be improved significantly by such geometry modifications. We also present empirical evidence that double injection effects occur in p+-i-n+ devices, and that these effects will limit the efficacy of such devices when subject to relatively long voltage pulses.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank E. Peterkin, Frank E. Peterkin, B. J. Hankla, B. J. Hankla, R. A. Peterson, R. A. Peterson, A. Rhagavendran, A. Rhagavendran, Paul Frazer Williams, Paul Frazer Williams, } "Breakdown of high-voltage silicon devices", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146564; https://doi.org/10.1117/12.146564

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