9 June 1993 Characterization of current filamentation in GaAs photoconductive switches
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146546
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
The spectral and temporal nature of the recombinant radiation from a GaAs photoconductive switch is described. A simultaneous measurement of the electrical avalanche pulse and associated temporal luminescence peak is utilized to extract a propagation velocity for the filamentary tip of approximately 5 X 108 cm/s. The measured spectral content of the filaments in a bulk structure is presented for various bias voltages and compared to a theoretical model for band-to-band recombination considering temperature, carrier density, and self-absorption effects.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff C. Adams, R. Aaron Falk, C. David Capps, and Gail L. Bohnhoff-Hlavacek "Characterization of current filamentation in GaAs photoconductive switches", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146546; https://doi.org/10.1117/12.146546

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