9 June 1993 Influence of fabrication techniques on gallium arsenide switch photoconductivity
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146539
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Photoconductivity of copper compensated, silicon doped GaAs (GaAs:Si:Cu) which is used as a bulk optically controlled semiconductor switch (BOSS) material is studied. Copper is diffused into GaAs:Si using a spin-on dopant source (Cu-doped silicon dioxide), and a leaky tube diffusion system for annealing. The switch photoconductivity is compared to that of samples processed using closed tube diffusion systems, where the Cu source for diffusion is a Cu film deposited by thermal evaporation on one surface of the GaAs wafer. High efficiency switch material is obtained by using the leaky tube technique and low power semiconductor laser is used as the excitation source for the switch photoconductivity measurements.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucy M. Thomas-Harrington, Vishnu K. Lakdawala, "Influence of fabrication techniques on gallium arsenide switch photoconductivity", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146539; https://doi.org/10.1117/12.146539
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