9 June 1993 Ion-implanted GaAs
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146536
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
This paper presents initial experimentation conducted on optically activated Gallium Arsenide (GaAs) switches when operated at high electric fields. A Nd:YAG laser operating at 1.06 micrometers has been used to initiate conduction in three sizes of planar GaAs switches. The optical energy required for initiation and delays observed prior to collapse into the sustained current mode are discussed. In addition, dark dc and pulsed experimental characterization studies of ion implanted GaAs switches are presented. The switches were implanted up to approximately 1018 carriers/cm3 under the cathode contact region.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolas C. Anderson, "Ion-implanted GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146536; https://doi.org/10.1117/12.146536
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